polyfet rf devices
SQ721
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
polyfet rf devices
SQ721
General Description Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t
transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS
TRANSISTOR 25.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V
11.0 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 60 TYP
25.0 WATTS OUTPUT )
MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 12.5 V, F = Idq = 0.40 A, Vds = 12.5 V, F =
400 MHz 400 MHz
η
VSWR
Relative Idq = 0.40 A, Vds = 12.5 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback C...