DatasheetsPDF.com

MMSF7P03HD Dataheets PDF



Part Number MMSF7P03HD
Manufacturers Motorola
Logo Motorola
Description SINGLE TMOS POWER MOSFET
Datasheet MMSF7P03HD DatasheetMMSF7P03HD Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF7P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF7P03HD Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors Single HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converter.

  MMSF7P03HD   MMSF7P03HD



Document
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF7P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF7P03HD Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors Single HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. • • • • • • • Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 35 mW ™ D CASE 751–05, Style 13 SO–8 G S Source Source Source Gate 1 2 3 4 8 7 6 5 Drain Drain Drain Drain Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Source Current — Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 W) Thermal Resistance — Junction–to–Ambient Maximum Temperature for Soldering Symbol VDSS VGS ID IDM IS PD TJ, Tstg EAS RθJA T Value 30 ± 20 7.0 50 2.3 2.5 – 55 to 150 5000 50 260 Unit Vdc Vdc Adc Apk Adc Watts °C mJ °C/W °C DEVICE MARKING S7P03 (1) When mounted on 1 inch square FR–4 or G–10 (VGS = 10 V @ 10 seconds) ORDERING INFORMATION Device MMSF7P03HDR2 Reel Size 13″ Tape Width 12 mm embossed tape Quantity 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. REV 2 TMOS ©Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MMSF7P03HD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (1) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(2) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.3 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(3) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 10 Vdc, ( Vd , ID = 4.9 4 9 Adc, Ad , VGS = 6.0 Vdc) (VDD = 15 Vdc, Vd ID = 1.0 1 0 Adc, Ad VGS = 10 Vdc Vdc, RG = 6.0 Ω) (VDD = 15 Vdc, Vd ID = 1.0 1 0 Adc, Ad VGS = 4.5 4 5 Vdc, Vdc RG = 10 Ω) td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage Reverse Recovery Time (IS = 4 4.9 9 Adc, Ad , VGS = 0 Vdc, Vd , ( dIS/dt = 100 A/µs) Reverse Recovery Stored Charge (1) Negative sign for P–Channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (3) Switching characteristics are independent of operating junction temperature. (IS = 2.3 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C) VSD trr ta tb QRR — — — — — — 0.76 0.61 47.9 27 21 0.052 1.2 — — — — — µC Vdc ns — — — — — — — — — — — — 23.5 42.7 57.4 53.6 16 15.2 99.7 55.2 37.9 4.2 11.5 7.6 47 85.4 114.8 107.2 32 30.6 199.4 110.4 75.8 — — — nC ns (VDS = 24 Vdc, Vdc VGS = 0 V, V f = 1.0 MHz) Ciss Coss Crss — — — 1200 580 160 1680 810 220 pF VGS(th) 1.0 RDS(on) — — gFS — 26 42 12 35 50 — — — mW Vdc V(BR)DSS 30 IDSS — — IGSS — — — — 1.0 25 100 nAdc — — µAdc Vdc Symbol Min Typ Max Unit Mhos 2 Motorola TMOS Power MOSFET Transistor Device Data MMSF7P03HD TYPICAL ELECTRICAL CHARACTERISTICS 12 I D , DRAIN CURRENT (AMPS) 10 8.0 6.0 4.0 2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V.


MMSF7N03Z MMSF7P03HD MMST2222A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)