MMSD301T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSD301T1/D SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage 1 Cathode 2 Anode MMSD301T1 MMSD701T1 Motorola Preferred Devices 2 1 CASE 425–04, STYLE 1 SOD–123 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range MMSD301T1 MMSD701T1 Symbol VR PF TJ Tstg Value 30 70 225 – 55 to +125 – 55 to +150 Unit Vdc mW °C °C DEVICE MARKING MMSD301T1 = XT, MMSD701T1 = XH ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 25 V) (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 IR MMSD301T1 MMSD701T1 VF MMSD301T1 MMSD701T1 — — — — 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 — — 13 9.0 200 200 nAdc nAdc Vdc — — 0.9 0.5 1.5 1.0 — — 0.9 0.5 1.5 1.0 pF Symbol V(BR)R 30 70 — — — — pF Min Typ Max Unit Volts Thermal Clad is a trademark of th...