MMPQ3904

FFB3904 / FMB3904 / MMPQ3904 Discrete POWER & Signal Technologies FFB3904 E2 B2 C1 FMB3904 C2 E1 C1 E1 C2 MMPQ3904 E2 B2 E3 B3 E4 B4 B1 B1 pin #1 B2 E2 pin #1 B1 E1 SC70-6 Mark: .1A SuperSOT™-6 Mark: .1A SOIC-16 C1 C2 C1 C3 C2 C4 C4 C3 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB3904 300 2.4 415 Max FMB3904 700 5.6 180 MMPQ3904 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purp...