MMG05N60D

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMG05N60D/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This IGBT contains a built−in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. Built−In Free Wheeling Diode Built−In Gate Protection Zener Diodes Industry Standard Package (SOT223) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms Robust High Voltage Termination Robust Turn−Off SOA C G E MMG05N60D IGBT 0.5 A @ 25°C 600 V 4 1 2 3 1=G 2=4=C 3=E CASE 318E−04 STYLE 13 TO−261A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameters Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage (RGE = 1.0 MΩ) Gate−Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case − IGBT Thermal Resistance — Junction to Ambient VCES VCGR VCGR IC25 IC90 ICM PD TJ, Tstg RθJC RθJA 600 600 ± 15 0.5 0.3 2.0 1.0 −55 to 150 30 150 Vdc Vdc Vdc Adc Watt °C °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C UNCLAMPED DRAIN−TO−SOURCE AVALANCHE ...