MMFT960T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT960T1/D Medium Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. Silicon Gate for Fast Switching Speeds RDS(on) = 1.7 Ohm Max Low Drive Requirement The SOT–223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use MMFT960T1 to order the 7 inch/1000 unit reel Use MMFT960T3 to order the 13 inch/4000 unit reel 1 GATE 3 SOURCE 2,4 DRAIN MMFT960T1 Motorola Preferred Device MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS(on) = 1.7 OHM MAX ® 4 1 2 3 CASE 318E–04, STYLE 3 TO–261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Non–Repetitive Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 60 ± 30 300 0.8 6.4 – 65 to 150 Unit Volts Volts mAdc Watts mW/°C °C DEVICE MARKING FT960 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient Maximum Temperature for Soldering Pu...