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MMFT2N02EL Dataheets PDF



Part Number MMFT2N02EL
Manufacturers Motorola
Logo Motorola
Description MEDIUM POWER MOSFET
Datasheet MMFT2N02EL DatasheetMMFT2N02EL Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N02EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recover.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N02EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc–dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • Low Drive Requirement to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max • Low RDS(on) — 0.15 Ω max • The SOT–223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel. Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 10 V, VGS = 5 V, Peak IL= 2 A, L = 0.2 mH, RG = 25 Ω) Symbol VDS VGS ID IDM PD(1) TJ, Tstg EAS 1 G S 3 MMFT2N02EL Motorola Preferred Device ® MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS RDS(on) = 0.15 OHM 2,4 D 1 4 2 3 CASE 318E–04, STYLE 3 TO–261AA Value 20 ± 15 1.6 6.4 0.8 6.4 – 65 to 150 66 Unit Vdc Adc Watts mW/°C °C mJ DEVICE MARKING 2N02L THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) Maximum Temperature for Soldering Purposes, Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec (1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint. TMOS is a registered trademark of Motorola, Inc. E–FET is a trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 TMOS ©Motorola Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MMFT2N02EL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA) Zero Gate Voltage Drain Current, (VDS = 20 V, VGS = 0) Gate–Body Leakage Current, (VGS = 15 V, VDS = 0) ON CHARACTERISTICS Gate Thresh.


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