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MMFT108T1 Dataheets PDF



Part Number MMFT108T1
Manufacturers Motorola
Logo Motorola
Description N-channel MOSFET
Datasheet MMFT108T1 DatasheetMMFT108T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT108T1/D Field Effect Transistor N–Channel Enhancement–Mode Logic Level SOT–223 ® 2, 4 DRAIN MMFT108T1 TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 3 SOURCE 1 2 3 4 CASE 318E–04, STYLE 3 SOT–223 (TO–261AA) MAXIMUM RATINGS Rating Drain – to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT108T1/D Field Effect Transistor N–Channel Enhancement–Mode Logic Level SOT–223 ® 2, 4 DRAIN MMFT108T1 TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 3 SOURCE 1 2 3 4 CASE 318E–04, STYLE 3 SOT–223 (TO–261AA) MAXIMUM RATINGS Rating Drain – to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VGS ID PD 0.8 6.4 TJ, Tstg – 65 to +150 Watts mW/°C °C Value 200 ±20 250 Unit Volts Volts mAdc DEVICE MARKING MT108 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (1) Maximum Temperature for Soldering Purposes Maximum Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 1. Device mounted on FR4 glass epoxy printed circuit using minimum recommended foot print. TMOS is a registered trademark of Motorola, Inc. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMFT108T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 130 V, VGS = 0) Gate–Body Leakage Current — Reverse (VGS = 15 Vdc, VDS = 0) V(BR)DSS 200 IDSS — IGSS — — 10 — 30 nAdc — — nAdc Vdc ON CHARACTERISTICS (2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static Drain–to–Source On–Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) VGS(th) 0.5 rDS(on) — — IDSX — — 25 — — 10 8.0 — 1.5 Ohms Vdc mA DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 V, V VGS = 0, 0 f = 1.0 MHz) Ciss Coss Crss — — — — — — 150 30 10 pF SWITCHING CHARACTERISTICS Turn–On Time (See Figure 1) Turn–Off Time (See Figure 1) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%. ton toff — — — — 15 15 ns ns RESISTIVE SWITCHING +25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1.0 M 20 dB 50 Ω ATTENUATOR TO SAMPLING SCOPE 50 Ω INPUT Vout ton 90% toff 90% 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50% OUTPUT V INVERTED out Figure 1. Switching Test Circuit Figure 2. Switching Waveforms 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMFT108T1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.15 3.8 0.079 2.0 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.091 2.3 0.248 6.3 0.059 1.5 inches mm SOT-223 SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the pad size. Thi.


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