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MMDF2P02HD Dataheets PDF



Part Number MMDF2P02HD
Manufacturers Motorola
Logo Motorola
Description Dual MOSFET
Datasheet MMDF2P02HD DatasheetMMDF2P02HD Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2P02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2P02HD Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and c.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2P02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2P02HD Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • • • • • • • • DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS RDS(on) = 0.160 OHM ™ D CASE 751–05, Style 11 SO–8 G S Source–1 Gate–1 Source–2 Gate–2 1 2 3 4 8 7 6 5 Drain–1 Drain–1 Drain–2 Drain–2 Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SO–8 Package Provided Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (2) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 18 mH, RG = 25 Ω) Thermal Resistance — Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg EAS RθJA TL Value 20 20 ± 20 3.3 2.1 20 2.0 – 55 to 150 324 62.5 260 Unit Vdc Vdc Vdc Adc Apk Watts °C mJ °C/W °C DEVICE MARKING D2P02 (1) Negative sign for P–Channel device omitted for clarity. (2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device MMDF2P02HDR2 Reel Size 13″ Tape Width 12 mm embossed tape Quantity 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 5 TMOS ©Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MMDF2P02HD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS(2) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS(3) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (VDS = 16 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) (VDS = 10 Vdc, ID = 2.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω) td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(2) (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (VDD = 15 V, IS = 2.0 A, dIS/dt = 100 A/µs) — — — — — — — — — — — — 19 66 25 37 11 21 45 36 15 1.2 5.0 4.0 38 132 50 74 22 42 90 72 20 — — — nC ns (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss — — — 420 290 116 588 406 232 pF VGS(th) 1.0 — RDS(on) — — gFS 2.0 0.118 0.152 3.0 0.160 0.180 — mhos 1.5 4.0 2.0 — Vdc mV/°C Ohm V(BR)DSS 20 — IDSS — — IGSS — — — — 1.0 10 100 nAdc — 25 — — Vdc m.


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