Silicon Tuning Diode
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for general freque...
Description
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency controland tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio
MMBV3102LT1
22 pF(Nominal) 30Volts VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3 CATHODE
1 ANODE
1
2 CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS Rating
Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range
Symbol VR IF PD
TJ T stg
Value 30 200 225 1.8
+125 –55 to +150
Unit Vdc mAdc mW mW/°C °C °C
DEVICE MARKING
MMBV3102LT1= M4C
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR=10µAdc) Reverse Voltage Leakage Current (VR=15Vdc) Diode Capacitance Temperature Coeffici...
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