MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTH10LT1/D
VHF/UHF Transistor
MMBTH10LT1
COLLECTOR 3 ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTH10LT1/D
VHF/UHF
Transistor
MMBTH10LT1
COLLECTOR 3 1 BASE
3
Motorola Preferred Device
NPN Silicon
2 EMITTER
1 2
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc
DEVICE MARKING
MMBTH10LT1 = 3EM
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit
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Preferred devices are Motorola recommended choices for fut...