MPSA43 / MMBTA43
Discrete POWER & Signal Technologies
MPSA43
MMBTA43
C
E C B
TO-92
E
SOT-23
Mark: 1E
B
NPN High ...
MPSA43 / MMBTA43
Discrete POWER & Signal Technologies
MPSA43
MMBTA43
C
E C B
TO-92
E
SOT-23
Mark: 1E
B
NPN High Voltage Amplifier
This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
200 200 6.0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA43 625 5.0 83.3 200
Max
*MMBTA43 350 2.8 357
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã 1997 Fairchild Semiconductor Corporation
MPSA43 / MMBTA43
NPN High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Uni...