MMBT5551LT1

MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW www.DataSheet4U.com SOT−23 (TO−236) CASE 318 STYLE 6 xxxM mW/°C °C/W mW mW/°C °C/W xxx = MMBT550LT1 = M1F, MMBT5551LT1, LT3, LT1G = G1 M = Month Code ORDERING INFORMATION Device MMBT5550LT1 MMBT5550LT1G MMBT5551LT1 Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping† 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 10,0...