MMBT3904LT1

MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT−23 (TO−236) CASE 318 Style 6 1AM = Specific Device Code 1AM 3 MARKING DIAGRAM 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 MMBT3904LT3G Package SOT−23 SOT−23 SOT−23 SOT−23 Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2004 1 February, 2004 − Rev. 5 Publication Order Number...