Document
General Purpose Transistor
NPN Silicon
MMBT3904L, SMMBT3904L
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS
Symbol VCEO VCBO VEBO
IC ICM
Value 40 60 6.0 200 900
Unit Vdc Vdc Vdc mAdc mAdc
Characteristic
Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2)
@TA = 25°C Derate above 25°C
RqJA PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve.
DATA SHEET www.onsemi.com
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
SOT−23 (TO−236) CASE 318 STYLE 6
MARKING DIAGRAM
1AM M G G
1
1AM = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3904LT1G
SOT−23 3000 / Tape &
SMMBT3904LT1G (Pb−Free)
Reel
MMBT3904LT3G
SOT−23 10,000 / Tape &
SMMBT3904LT3G (Pb−Free)
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
August, 2021 − Rev. 14
Publication Order Number: MMBT3904LT1/D
MMBT3904L, SMMBT3904L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 4)
V(BR)CEO
40
−
Vdc
V(BR)CBO
60
−
Vdc
V(BR)EBO
6.0
−
Vdc
IBL
−
50
nAdc
ICEX
−
50
nAdc
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
HFE
−
40
−
70
−
100
300
60
−
30
−
VCE(sat)
Vdc
−
0.2
−
0.3
VBE(sat)
Vdc
0.65
0.85
−
0.95
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) SWITCHING CHARACTERISTICS
fT Cobo Cibo hie hre hfe hoe NF
300
−
MHz
−
4.0
pF
−
8.0
pF
1.0
10
kW
0.5
8.0
X 10− 4
100
400
−
1.0
40
mmhos
−
5.0
dB
Delay Time Rise Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc)
td
−
35
ns
tr
−
35
Storage Time Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts tf
−
200
ns
−
50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
DUTY CYCLE = 2% 300 ns
- 0.5 V
+10.9 V 10 k
< 1 ns
+3 V 275
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
+10.9 V
0 CS < 4 pF*
- 9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
10 k 1N916
+3 V 275
CS < 4 pF*
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
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CAPACITANCE (pF)
MMBT3904L, SMMBT3904L
10 7.0 5.0
3.0 2.0
1.0 0.1
500 300 200
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C
5000 3000 V.