MMBR951ALT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR951ALT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure 18 Finger, 1.25 Micron Geometry with Gold Top Metal Gold Sintered Back Metal Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR951 MRF957 MRF9511 SERIES IC = 100 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR951LT1, MMBR951ALT1 CASE 419–02, STYLE 3 MRF957T1 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF9511LT1 REV 9 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MMBR951 MRF957 MRF9511 SERIES 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above Tcase = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PD(max) IC TJmax Tstg RθJC MMBR951LT1 MMBR951ALT1 10 20 1.5 0.322 4.29 100 150 – 55 to +150 233 MRF9511LT1 10 20 1.5 0.322 4.29 100 150 – 55 to +150 233 MRF957T1 10 20 15 0.227 3.03 100 150 – 55 to +150 330 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W DEVICE MARKING MRF9511LT1 = 11 MMBR951ALT1 = AAG MMBR951LT1 = 7Z MRF957T1 = B ELECTRICAL CHARACTERISTICS (TA = 25°C unl...