MMBR911LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR911LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost. High Gain–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR911LT1 IC = 60 mA LOW NOISE HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Power Dissipation @ Tcase = 75°C (1) Derate linearly above Tcase = 75°C Storage Temperature Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD(max) Tstg TJmax Value 12 20 2.0 60 333 4.44 – 55 to +150 150 Unit Vdc Vdc Vdc mA mW mW/°C °C °C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RθJC Value 225 Unit °C/W DEVICE MARKING MMBR911LT1 = 7P NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. REV 8 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MMB...