MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5179LT1/D
NPN Silicon High-Frequency Tra...
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5179LT1/D
NPN Silicon High-Frequency
Transistor
Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. High Gain — Gpe = 15 dB Typ @ f = 200 MHz Low Noise — NF = 4.5 dB Typ @ f = 200 MHz Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 15 30 3.0 50 150 0.375 5.00 Unit Vdc Vdc Vdc mAdc °C W mW/°C
MMBR5179LT1
RF AMPLIFIER
TRANSISTOR NPN SILICON
THERMAL CHARACTERISTICS
Characteristic Storage Temperature Thermal Resistance Junction to Case Symbol Tstg RθJC Max – 55 to +150 200 Unit °C °C/W CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB)
DEVICE MARKING
MMBR5179LT1 = 7H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 30 3.0 — — — — — — — — 0.02 Vdc Vdc Vdc µAdc
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