MMBFJ309

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor N–Channel 3 GATE MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc) Gate Reverse Current (VGS = –15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ309 MMBFJ310 V(BR)GSS IGSS VGS(off) – 25 — — – 1.0 – 2.0 — — — — — — – 1.0 – 1.0 – 4.0 – 6.5 Vdc nAdc µAdc Vdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate–Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) MMBFJ309 MMBFJ310 IDSS VGS(f) 12 24 — — — — 30 60 1.0 mAdc Vdc SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = –10 Vdc, VDS = 0 Vdc,...