MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF5484LT1/D
JFET Transistor
N–Channel
2 SOURCE 3 GATE
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF5484LT1/D
JFET
Transistor
N–Channel
2 SOURCE 3 GATE
MMBF5484LT1
Motorola Preferred Device
1 DRAIN
MAXIMUM RATINGS
Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg – 65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc
1 2
3
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBF5484LT1 = 6B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = – 20 Vdc, VDS = 0) (VGS = – 20 Vdc, VDS = 0, TA = 100°C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS — — VGS(off) – 0.3 – 1.0 – 0.2 – 3.0 nAdc µAdc Vdc – 25 — Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 1. FR– 5 = 1.0 |Yfs| |yos| 3000 — 6000 50 µmhos µmhos
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