MMBF5457LT1

www.DataSheet4U.com MMBF5457LT1 Preferred Device JFET − General Purpose Transistor N−Channel Features http://onsemi.com Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Reverse Gate−Source Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 −25 10 Unit Vdc Vdc Vdc mAdc 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) (TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 −55 to +150 Unit 1 3 mW mW/°C °C/W °C SOT−23 (TO−236) CASE 318 STYLE 10 2 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 6MG G 1 6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBF5457LT1 MMBF5457LT1G Package SOT−23 SOT−23 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel...