MMBF4393LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF4391LT1/D JFET Switching Transistors N–Channel 2 SOURCE 3 GATE MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 3 1 1 DRAIN MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Forward Gate Current Symbol VDS VDG VGS IG(f) Value 30 30 30 50 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25°C) (VGS = 15 Vdc, VDS = 0, TA = 100°C) Gate–Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 ID(off) — — 1.0 1.0 nAdc µAdc V(BR)GSS IGSS — — VGS(off) –4.0 –2.0 –0.5 –10 –5.0 –3.0 1.0 0.20 nAdc µAdc Vdc 30 — Vdc Off–State Drain Current (VDS = 15 Vdc, VGS = –12 Vdc) (VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C) 1. FR– 5 = 1.0  0.75  0.062 in. Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMBF4391LT1 MMBF4392LT1...