Dual Switching Diode
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD7000LT1/D
Dual Switching Diode
MMBD7000LT1
Motorola...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD7000LT1/D
Dual Switching Diode
MMBD7000LT1
Motorola Preferred Device
1 ANODE
3 CATHODE/ANODE
2 CATHODE
3 1 2
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc CASE 318 – 08, STYLE 11 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBD7000LT1 = M5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125°C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR IR2 IR3 VF 0.55 0.67 0.75 trr C — — 0.7 0.82 1.1 4.0 1.5 ns pF 100 — — — — 1.0 3.0 100 Vdc Vdc µAdc
0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola...
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