MMBD352WT1

www.DataSheet4U.com MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features Very Low Capacitance − Less Than 1.0 pF @ Zero Volts Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA Pb−Free Package is Available http://onsemi.com 1 ANODE 3 CATHODE/ANODE 2 CATHODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 3 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SOT−323 (SC−70) CASE 419 STYLE 9 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW MARKING DIAGRAM 1.6 RqJA PD 625 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W M5 M mW mW/°C °C/W °C M5 M = Device Code = Date Code 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBD352WT1 MMBD352WT1G Package SOT−323 SOT−323 (Pb−Free)...