NIF5002N

NIF5002N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Pb−Free Packages are Available Applications Lighting Solenoids Small Motors MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Gate−to−Source Voltage Continuous Drain Current Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TT = 25°C (Note 3) Operating Junction and Storage Temperature VDSS VDGR VGS ID PD TJ, Tstg 42 V 42 V "14 V Internally Limited 1.1 W 1.7 ...