NESG3031M05

PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz MAXIMUM STABLE POWER GAIN: MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz SiGe HBT TECHNOLOGY: USH3 process, fmax = 110 GHz M05 PACKAGE: Flat-lead 4 pin thin-type super minimold package ORDERING INFORMATION PART NUMBER NESG3031M05 NESG3031M05-T1 QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM 8 mm wide embossed taping Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 12.0 4.3 1.5 35 150 150 −65 to +150 UNIT V V V mA mW °C °C Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB California Eastern Laboratories NESG3031M05 ELECTRICAL CHARACHTERISTICS (TA = 25°C) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain...