NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Description
DATA SHEET
SILICON POWER TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliabi...