NE8500295-6

PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance. FEATURES Class A operation High power output High reliability 110 100 100 240 PHYSICAL DIMENSIONS NE8500200 (CHIP) (unit: µm) 640 100 90 1800 100 SELECTION CHART PACKAGE CODE-95 (unit: mm) PERFORMANCE SPECIFIED PART NUMBER Pout (**) (dBm) GL (**) (dB) USABLE FREQUENCY (GHz) 2.0 to 10 2.5 ±0.3 DIA SOURCE 0.7 ±0.1 GATE 4.0 MIN. NE8500200(*) NE8500200-WB(*) NE8500200-RG(*) NE8500295-4 NE8500295-6 NE8500295-8 33.8 min 8.0 min 5.9 ±0.2 33.8 min 33.8 min 33.5 min 10.5 min 9.5 min 8.0 min 3.5 to 5.5 5.5 to 7.5 7.5 to 8.5 DRAIN 14.0 ±0.3 18.5 MAX. 2.1 ±0.15 0.1 4.5 MAX. 0.2 MAX. 7.2 ±0.2 1.0 * GB, RG indicate a type of containers for chips. WB: black carrier, RG: ring, ** Specified at the condition at the last page. Document No. P10969EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 NE85002 SERIES ABSOLUTE MAXIMUM R...