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NE73430 Dataheets PDF



Part Number NE73430
Manufacturers NEC
Logo NEC
Description NPN SILICON GENERAL PURPOSE TRANSISTOR
Datasheet NE73430 DatasheetNE73430 Datasheet (PDF)

NPN SILICON GENERAL PURPOSE TRANSISTOR FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435) • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION 30 (SOT 323 STYLE) NE734 SERIES 35 (MICRO-X) DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applicat.

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NPN SILICON GENERAL PURPOSE TRANSISTOR FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435) • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION 30 (SOT 323 STYLE) NE734 SERIES 35 (MICRO-X) DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability. The NE73433 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the NE73435 is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 0.9 GHz Maximum Available Gain3 at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Insertion Power Gain at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Forward Current Gain Ratio at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 Collector to Base Capacitance4 at VCB = 10 V, IC = 0 mA, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Case) µA µA pF mW °C/W 1.5 0.75 150 833 .55 UNITS GHz GHz dB dB dB dB dB dB MIN NE73430 2SC4185 30 TYP MAX MIN 1.5 2.3 2.1 4.0 17 18 13 16 9 100 200 0.1 0.1 1.5 250 550 3.5 NE73435 2SC2148 35 TYP 3.0 MAX NFMIN MAG |S21E|2 8 8 25 hFE 40 100 180 0.1 ICBO IEBO CCB PT RTH Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figures. 3. Maximum Available Gain (MAG) is calculated MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| 4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. California Eastern Laboratories NE734 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 30 14 3 50 2002 -65 to +2003 NE73435 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) 500 1000 1500 2000 NFOPT (dB) 2.0 3.1 4.2 5.1 GA (dB) 16.1 11.2 9.2 7.1 ΓOPT MAG 0.30 0.43 0.54 0.56 ANG 80 126 168 178 Rn/50 0.63 0.33 0.19 0.20 VCE = 10 V, IC = 3 mA Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum Junction Temperature for the NE73430 is 150°C. 3. Maximum Storage Temperature for the NE73430 and the NE73435 Grade D is 150°C. VCE = 10 V, IC = 15 mA 500 1000 1500 2000 3.3 4.7 6.5 7.4 17.5 13.5 10.8 9.2 0.34 0.47 0.67 0.64 120 168 -174 -163 0.36 0.27 0.13 0.46 TYPICAL PERFORMANCE CURVES (TA = 25°C) SATURATION VOLTAGE vs. COLLECTOR CURRENT 2 500 DC CURRENT GAIN vs. COLLECTOR CURRENT Collector to Emitter and Base to Emitter Saturation Voltage VCE (SAT), VBE (SAT) (V) VBE(SAT) 1 0.7 0.5 0.3 0.2 IC = 10XIB DC Forward Current Gain, hFE 300 200 VCE = 10 V 100 70 VCE = 1 V 50 30 20 0.1 0.07 0.05 0.03 0.02 0.1 0.2 0.5 1 2 5 10 20 50 VCE(SAT) 10 0.5 0.7 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 7 5 3 2 VCE = 10 V NE73435 Gain Bandwidth Product, fT (GHz) 1 0.7 0.5 0.3 0.2 0.1 0.5 0.7 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) NE734 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) NE73435 GAIN vs. FREQUENCY 32 VCE = 10 V IC = 30 mA NE73435 NOISE FIGURE vs. COLLECTOR CURRENT 6 VCE = 10 V f = 500 MHz 5 MAG Noise Figure, NF (dB) 24 Gain, (dB) |S21E| 2 16 4 3 8 2 NE73435 TUNED 0 0.1 0.2 0.3 0.5 0.7 1 2 3 5 1 0.5 0.7 1 2 3 5 7 10 20 30 50 Frequency, f (GHz) Collector Current, IC (mA) ORDERING INFORMATION PART NUMBER NE73430-T1 NE73435 Note: 1. Embossed tape 12 mm wide. QUANTITY 3000 1 PACKAGING Tape & Reel ESD Bag NE734 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS 90˚ 0.8 0.6 0.4 3 4 0.2 5 10 20 50 10 20 -50 -20 S22 -0.2 S11 -3 -0.4 -2 -0.6 -0.8 -1 -1.5 -10 -5 -4 1 1.5 2 135˚ S21 45˚ S12 180˚ 5.00 10.00 15.00 0.05 0.10 0.15 0˚ 0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 Coordinates in Ohms 225˚ Frequency in GHz (VCE = 10 V, IC = 20 mA) 315˚ 20.00 270˚ NE73435 VCE = 10 V, IC = 3 mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 2500 3000 4000 M.


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