NE685M03

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 FEATURES NEW M03 PACKAGE: Smallest transistor outline package available Low profile/0.59 mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 TK 3 1.4 ±0.1 0.45 (0.9) 0.45 0.3±0.1 DESCRIPTION The NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 1 0.2±0.1 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE ...