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NE651R479A

Part Number	NE651R479A
Manufacturer	NEC
Description	0.4 W L-BAND POWER GaAs HJ-FET
Features	• GaAs HJ-FET structure • High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13...
Published	May 7, 2005
Datasheet	NE651R479A PDF File

Features

• GaAs HJ-FET structure 
• High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 5...

Similar Datasheet

NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET - NEC

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