NE650R479A

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES High Output Power High Linear Gain : PO (1 dB) = +26 dBm typ. : 14 dB typ. High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz ORDERING INFORMATION (PLAN) Part Number NE650R479A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE650R479A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IGF IGR PT Tch Tstg Ratings 15 –7 0.6 12 12 2.5 150 –65 to +150 Unit V V A mA mA W °C °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document...