NE64535

NE64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. PACKAGE STYLE .085 4L SQ FEATURES INCLUDE: NF = 1.6 dB Typical @ 2 GHz  S21E2 = 11 dB Typical @ 2 GHz Hermetic Ceramic Package MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C O -65 °C to +200 °C -65 °C to +150 °C 85 °C/W TC = 25 °C 1 = Collector 2 & 4 = Emitter 3 = Base ORDER CODE: ASI10752 CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21E NF GA 2 TEST CONDITIONS VCB = 8 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 10 V VCE = 8 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA MINIMUM TYPICAL MAXIMUM 100 1.0 50 250 0.6 8.0 10 10 8.5 11 1.6 11 2.5 UNITS nA µA --pF GHz dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004 ...