NE57810S

INTEGRATED CIRCUITS NE57810 Advanced DDR memory termination power with external reference in Product data Supersedes data of 2002 Jul 16 2003 Sep 12 Philips Semiconductors Philips Semiconductors Product data Advanced DDR memory termination power with external reference in NE57810 DESCRIPTION The NE57810 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions. The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus voltage) that is one-half that of the RAM supply voltage. It is capable of providing up to ±3.5 A for sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at start-up, and overtemperature shutdown protects the device in extreme temperature situations. The SPAK-5 (SOT756) package is thermally robust for flexibility of thermal design. Because the NE57810 is a linear regulator, no external inductors or switching FETs are necessary. Fast response to load changes reduces the need for output capacitors. FEATURES Fast transient response time Overtemperature protection Overcurrent protection Commercial (0 °C to +70 °C) temperature range Reduced need for external components (switching FETs, inductors, decoupling capacitors) APPLICATIONS Internal divider maintains termination voltage at 1/2 memory supply voltage Desktop microcomputer systems Workstation...