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MM4148 Dataheets PDF



Part Number MM4148
Manufacturers Shanghai Sunrise
Logo Shanghai Sunrise
Description SURFACE MOUNT SWITCHING DIODE
Datasheet MM4148 DatasheetMM4148 Datasheet (PDF)

SHANGHAI SUNRISE ELECTRONICS CO., LTD. MM4148 SURFACE MOUNT SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES • Ideal for surface mount pick and place application • Small glass structure ensures high reliability • Fast switching • Low leakage • High temperature soldering guaranteed: o 250 C/10S/9.5mm lead length at 5 lbs tension TECHNICAL SPECIFICATION MINI MELF .063(1.6) .055(1.4) .020(0.5) .012(0.3) .020(0.5) .012(0.3) MECHANICAL DATA • Terminal: Plated axial leads solde.

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SHANGHAI SUNRISE ELECTRONICS CO., LTD. MM4148 SURFACE MOUNT SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES • Ideal for surface mount pick and place application • Small glass structure ensures high reliability • Fast switching • Low leakage • High temperature soldering guaranteed: o 250 C/10S/9.5mm lead length at 5 lbs tension TECHNICAL SPECIFICATION MINI MELF .063(1.6) .055(1.4) .020(0.5) .012(0.3) .020(0.5) .012(0.3) MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Polarity: Color band denotes cathode • Mounting position: Any 0.146(3.7) 0.130(3.3) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Ratings at 25oC ambient temperature unless otherwise specified) RATINGS Reverse Voltage Peak Reverse Voltage Forward Current (average) Repetitive Forward Peak Current Power Dissipation at Ta=25oC Forward Voltage (IF=10mA) Reverse Current (VR=20V) Reverse Current (VR=75V) SYMBOL VR VRM IO IFRM Ptot VF IR1 VALUE 75 100 150 300 500 1 25 5 50 4 4 0.35 2.5 0.45 -55 +175 UNITS V V mA mA mW V nA mA mA pF nS o IR2 Reverse Current (VR=20V,TJ=100oC) Ct Capacitance (note 1) Reverse Recovery Time (note 2) trr Rθ(ja) Thermal Resistance (Junction to ambient air) Vfr Voltage Rise (note 3) hv Rectification Efficiency (note 4) TSTG,TJ Operating Junction and Storage Temperature Range Notes: 1. VR=0V, f=1 MHz 2. IF=10mA to IR=1mA, VR=6V, RL=100W 3. When switching on tested with 50mA forward pulses tp=0.1as,Rise Time<30ns,fp=5 to 100KHz 4. f=100MHz,VRF=2V C/mW V o C http://www.sse-diode.com .


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