MM118-12

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 Features Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF Compact and rugged construction offering weight and space savings Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to part number, see option below) HPM (Hermetic Power Module) Isolation voltage capability (in reference to the base) in excess of 3kV Very low thermal resistance Thermally matched construction provides excellent temperature and power cycling capability Additional voltage ratings or terminations available upon request PART NUMBER Collector-to-Emitter Breakdown Voltage (Gate shorted to Emitter), @ Tj≥ 25° C Collector-to-Gate Breakdown Voltage @ Tj≥ 25° C, RGS= 1 MΩ Gate-to-Emitter Voltage continuous transient Continuous Collector Current Tj = 25° C Tj= 90° C Peak Collector Current, pulsewidth limited by Tj max Power Dissipation Thermal resistance, junction to base per switch MM118-XX SERIES 600 / 1200 Volts 150 Amps 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (IGBT) BRIDGE MM118-06 600 V 600 V +/- 20 V +/- 30 V 60 A 32 A 120 A 165 W 0.75° C/W 0.5° C/W MM118-12 1200 V 1200 V +/- 20 V +/- 30 V 52 A 33 A 104 A 165 W 0.75° C/W 0.5° C/W Maximum Ratings per switch @ 25° C (unless otherwise specified) SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM PD RΘ jc, max RΘ , typ Mechanical Outline Datasheet# MSC0321A MM-...