Document
MLN1033F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1033F is Designed for
PACKAGE STYLE .250 2L FLG
A ØD .060 x 45° CHAMFER E
FEATURES:
• • • Omnigold™ Metalization System
B
C
G L
H J
F I K M NP
MAXIMUM RATINGS
IC VCBO VCES VEBO PDISS TJ TSTG θ JC
O
0.5 A 40 V 25 V 3.5 V 20.6 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 17 OC/W
O O O
DIM A B C D E F G H I J K L M N P
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78
.032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75
ORDER CODE: ASI10626
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO hFE PG IC = 2 mA IC = 5 mA IE = 2 mA
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40 25 3.5
UNITS
V V V
VCE = 5.0 V VCE = 18 V POUT = 2.0 W
IC = 400 mA ICQ = 220 mA f = 1.0 GHz
15 12
150
--dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
.