MLN1030S

MLN1030S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030S is Designed for PACKAGE STYLE .280 4L STUD A 45° FEATURES: Omnigold™ Metalization System B D S G S D C J E I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.250 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 20 OC/W O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10623 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG IC = 1 mA IC = 1 mA IE = 1 mA VCB = 24 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 40 28 3.5 0.5 UNITS V V V mA --pF dB VCE = 5.0 V VCB = 28 V VCE = 20 V POUT = 1.0 W IC = 100 mA f = 1.0 MHz ICQ = 150 mA f = 1.0 GHz 20 120 5.0 9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...