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MJW21195

Part Number	MJW21195
Manufacturer	ON
Description	Silicon Power Transistors
Published	May 7, 2005
Detailed Description	MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology...
Datasheet	MJW21195 PDF File

Overview

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features • Total Harmonic Distortion Characterized • High DC Current Gain − hFE = 20 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 2.
25 A, 80 V, 1 Second • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.
5 V Collector Current − Continuous Collector Current − Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC Value 250 400 5.
0 400 16 30 Unit Vdc Vdc Vdc Vdc...

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