MJW21192 (NPN), MJW21191 (PNP)
Complementary Silicon Plastic Power Transistors
Specifically designed for power audio out...
MJW21192 (
NPN), MJW21191 (
PNP)
Complementary Silicon Plastic Power
Transistors
Specifically designed for power audio output, or high power drivers in audio amplifiers.
DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms TO−247AE Package Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
− Peak
Symbol VCEO VCB VEB IC
MJW21191 MJW21192
150
150
5.0
8.0 16
Unit Vdc Vdc Vdc Adc
Base Current
Total Power Dissipation @ TC = 25_C Derate above 25_C
Operating and Storage Junction Temperature Range
IB PD
TJ, Tstg
2.0
125 0.65
– 65 to + 150
Adc W W/_C
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RqJC
1.0
_C/W
Thermal Resistance, Junction to Ambient RqJA
50
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1000
PNP NPN 100
C, CAPACITANCE (pF)
10
1.0
1.0
10
100
1000
VR, REVERSE VOLTAGE (V)
Figure 1. Typical Capacitance @ 25°C
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/...
