ON Semiconductort
NPN Silicon Power Transistors
SWITCHMODEt Bridge Series
. . . specifically designed for use in half ...
ON Semiconductort
NPN Silicon Power
Transistors
SWITCHMODEt Bridge Series
. . . specifically designed for use in half bridge and full bridge off
line converters.
Excellent Dynamic Saturation Characteristics
Rugged RBSOA Capability
Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V Collector–Emitter Breakdown — V(BR)CES — 650 V State–of–Art Bipolar Power
Transistor Design
Fast Inductive Switching:
tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C tsv = 1 µs (Typ) @ 100_C
Ultrafast FBSOA Specified
100_C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
Leakages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol MJ16110 MJW16110 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Pulsed (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Pulsed(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerated above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
VCEO(sus) VCES VEBO IC ICM IB IBM PD
TJ, Tstg
400
650
6
15 20
10 15
175 100
1
–65 to 200
135 54 1.09
–55 to 150
Vdc Vdc Vdc Adc
Adc
Watts W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...