Document
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction • These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021
VCEO
Max
150 200 250
Unit Vdc
Collector−Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021
VCB
Vdc 150 200 250
Emitter−Base Voltage
Collector Current − Continuous − Peak (Note 1)
VEB 5.0 Vdc
IC 15 Adc 30
Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C
IB 0.5 Adc PD 150 W
1.2 W/_C
Operating and Storage Junction Temperature TJ, Tstg – 65 to
Range
+ 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
0.83 _C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
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15 AMPERE DARLINGTON COMPLEMENTARY SILICON
POWER TRANSISTORS 150−250 VOLTS, 150 WATTS
NPN COLLECTOR 2
PNP COLLECTOR 2
BASE 1
BASE 1
EMITTER 3
MJH11018 MJH11020 MJH11022
EMITTER 3
MJH11017 MJH11019 MJH11021
1 2
3
SOT−93 (TO−218) CASE 340D STYLE 1
TO−247 CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 10
1
Publication Order Number: MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
MARKING DIAGRAMS
TO−247
TO−218
MJH110xx AYWWG
AYWWG MJH110xx
1 BASE
3 EMITTER
2 COLLECTOR
1 BASE
3 EMITTER
2 COLLECTOR
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
ORDERING INFORMATION Device Order Number
MJH11017G MJH11018G MJH11019G MJH11020G MJH11021G MJH11022G MJH11017G MJH11018G MJH11019G MJH11020G MJH11021G MJH11022G
Package Type
TO−218 (Pb−Free)
TO−218 (Pb−Free)
TO−218 (Pb−Free)
TO−218 (Pb−Free)
TO−218 (Pb−Free)
TO−218 (Pb−Free)
TO−247 (Pb−Free)
TO−247 (Pb−Free)
TO−247 (Pb−Free)
TO−247 (Pb−Free)
TO−247 (Pb−Free)
TO−247 (Pb−Free)
Shipping 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail
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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
160
140
PD, POWER DISSIPATION (WATTS)
120
100
80
60
40
20
0 0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C) Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 75 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 125 Vdc, IB = 0)
MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc IC = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 100 mA) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 150 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.