MJE200

MJE200 MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 40 25 8 5 15 150 - 65 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=10mA, IB=0 VCB=40V, IE=0 VCB=40V, IE=0 @ TJ=125°C VBE=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IC=200mA IC=5A, IB=1A IC=5A, IB=1A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 Min. 25 Max. 100 100 100 180 0.3 0.75 1.8 2.5 1.6 V V V V V MHz pF Units V nA µA nA VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) VBE(on) fT Cob Base- Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE200 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 IC = 10 IB hFE, DC CURRENT GAIN VCE = 2V 100 1 V BE(sat) VCE=1V 10 0.1 ...