MJE180/181/182
MJE180/181/182
Low Power Audio Amplifier Low Current High Speed Switching Applications
1
TO-126 2.Coll...
MJE180/181/182
MJE180/181/182
Low Power Audio Amplifier Low Current High Speed Switching Applications
1
TO-126 2.Collector 3.Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : MJE180 : MJE181 : MJE182
1. Emitter
Value 60 80 100 40 60 80 7 3 6 1 1.5 12.5 150 - 65 ~ 150
Units V V V V V V V A A A W W °C °C
VCEO
Collector-Emitter Voltage : MJE180 : MJE181 : MJE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
VEBO IC ICP IB PC PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : MJE180 : MJE181 : MJE182 Collector Cut-off Current : MJE180 : MJE181 : MJE182 : MJE180 : MJE181 : MJE182 Emitter Cut-off Current DC Current Gain Test Condition IC = 10mA, IB = 0 Min. 40 60 80 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 12 250 Max. Units V V V µA µA µA mA mA mA µA
ICBO
VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 @ TC = 150°C VCB = 80V, IE = 0 @ TC = 150°C VCB = 100V, IE = 0 @ TC = 150°C VBE = 7V, IC = 0 VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA VCE = 1V, IC = 500mA VCE = 10V, IC = 100mA VCB = 10V, IE = 0, f = 0.1MHz 50
IEBO hFE
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