MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
Complementary Silicon Plastic Power Transistors
These devices are de...
MJE15028, MJE15030 (
NPN), MJE15029, MJE15031 (
PNP)
Complementary Silicon Plastic Power
Transistors
These devices are designed for use as high−frequency drivers in audio amplifiers.
Features
High Current Gain − Bandwidth Product TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G
VCEO
120 150
Vdc
Collector−Base Voltage MJE15028G, MJE15029G MJE15030G, MJE15031G
VCB Vdc 120
150
Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation
@ TC = 25_C Derate above 25°C
VEB 5.0 Vdc
IC 8.0 Adc
ICM 16 Adc
IB 2.0 Adc
PD 50 W 0.40 W/_C
Total Device Dissipation @ TA = 25_C Derate above 25°C
PD 2.0 W
0.016
W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient
Symbol RqJC RqJA
Max 2.5 62.5
Unit _C/W _C/W
http://onsemi.com
8 AMPERE POWER
TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
PNP
COLLECTOR 2,4
NPN
COLLECTOR 2,4
1 BASE
1 BASE
3 EMITTER
4
3 EMITTER
TO−220 CASE 221A
STYLE 1
1 2 3
MARKING DIAGRAM
MJE150x...