MJE1123

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE1123/D Bipolar Power PNP Low Dropout Regulator Transistor The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and exhibits the following main features: High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.) Rating Collector–Emitter Sustaining Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VCEO VCB VEB IC ICM IB PD TJ, Tstg Value 40 50 5.0 4.0 8.0 4.0 75 0.6 – 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C MJE1123 PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case° Thermal Resistance — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 seconds RθJC RθJA TL °1.67° °70° 275 °C/W °C CASE 221A–06 TO–220AB ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted) Characteristic OFF CHARACTERISTICS* Collector–Emitter Sustaining Voltage (IC = 1.0...