MJD350

MJD350 MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value - 300 - 300 -3 - 0.5 - 0.75 15 1.56 150 - 65 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) * Collector-Emitter Sustaining Voltage ICEO Collector Cut-off Current IEBO Emitter Cut-off Current hFE * DC Current Gain * Pulse Test: PW≤300µs, Duty Cycle≤2% IC = 1mA, IB = 0 VCB = -300...