MJD340

MJD340 MJD340 High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 300 300 3 0.5 0.75 15 1.56 150 - 65 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO IEBO hFE Parameter * Collector Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 1mA, IB = 0 VCB = 300V, IE =0 VEB = 3V, IC = 0 VCE = 10V, IC = 50mA 30 Min. 300 Max. 0.1 0.1 240 Units V mA mA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD340 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 10V IC = 10 IB hFE, DC CURRENT GAIN 100 1 V BE(sat) V CE(sat) 0.1 10 1 1 10 100 1000 0.01 10 100 1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 24 ICP (max) 21 IC[mA],...