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MJD2955

ST Microelectronics

Complementary Silicon Power Transistors

MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 ...


ST Microelectronics

MJD2955

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Description
MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP type voltage and current values are negative. February 2002 NPN PNP Value MJD3055 MJD2955 70 60 5 10 6 20 -65 to 150 150 Unit V V V A A W oC oC 1/6 MJD2955 / MJD3055 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 6.25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX ICBO Collector Cut-off VCE = 70 V Current (VBE = -1.5 V) VCE = 70 V Collector Cut-off Current (IE = 0) VCB = 70 V VCB = 70 V Tj = 150 oC Tj = 150 oC ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0)...




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