MJD2955

www.DataSheet4U.com MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC = 500 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS MARKING DIAGRAMS 4 1 2 3 DPAK CASE 369C STYLE 1 YWW J xx55G MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation (Note1) @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD{ PD 1.75 0.014 TJ, Tstg −55 to +150 Max 60 70 5 10 6 20 0.16 Unit Vdc Vdc Vdc Adc Adc W W/°C W W/°C °C 1 2 3 4 YWW J xx55G DPAK−3 CASE 369D STYLE 1 Y = Year WW = Work Week Jxx55 = Device Code x = 29 or 30 G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Note1) Symbol RqJC RqJA Max 6.25 71.4 Unit °C/W °C/W ORDERING...